Datasheet4U Logo Datasheet4U.com

BU2520DX - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

📥 Download Datasheet

Datasheet preview – BU2520DX

Datasheet Details

Part number BU2520DX
Manufacturer NXP
File Size 70.68 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet BU2520DX Datasheet
Additional preview pages of the BU2520DX datasheet.

📁 Similar Datasheet

  • BU2520DX - SILICON POWER TRANSISTOR (SavantIC)
  • BU2520DX - NPN Transistor (INCHANGE)
  • BU2520D - SILICON POWER TRANSISTOR (SavantIC)
  • BU2520DF - SILICON POWER TRANSISTOR (SavantIC)
  • BU2520DF - NPN Transistor (INCHANGE)
  • BU2520DW - SILICON POWER TRANSISTOR (SavantIC)
  • BU2520DW - NPN Transistor (INCHANGE)
  • BU2520A - NPN Transistor (INCHANGE)
  • BU2520A - SILICON POWER TRANSISTOR (SavantIC)
  • BU2520AF - NPN Transistor (INCHANGE)
Other Datasheets by NXP
  • BU2520D - Silicon Diffused Power Transistor
  • BU2520DF - Silicon Diffused Power Transistor
  • BU2520DW - Silicon Diffused Power Transistor
  • BU2520A - Silicon Diffused Power Transistor
  • BU2520AF - Silicon Diffused Power Transistor
  • BU2520AW - Silicon Diffused Power Transistor
  • BU2520AX - Silicon Diffused Power Transistor
  • BU2522A - Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 6 0.35 MAX. 1500 800 10 25 45 5.0 2.2 0.5 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A IF = 6.
Published: |