BUJD203AD
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Surface-mountable package
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC;
see Figure 4
Ptot total power
dissipation
see Figure 3; Tmb ≤ 25 °C
VCESM
collector-emitter
peak voltage
VBE = 0 V
Static characteristics
hFE
DC current gain
IC = 500 mA; VCE = 5 V;
see Figure 12; Tmb = 25 °C
VCE = 5 V; IC = 3 A; Tmb = 25 °C;
see Figure 12
VCEOsus
collector-emitter
IB = 0 A; LC = 25 mH; IC = 10 mA;
sustaining voltage see Figure 7; see Figure 8
Min Typ Max Unit
- - 4A
- - 80 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V
