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NXP Semiconductors Electronic Components Datasheet

BUJD203AX Datasheet

NPN power transistor

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BUJD203AX
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.
1.2 Features and benefits
„ Fast switching
„ High voltage capability
„ Integrated anti-parallel E-C diode
„ Isolated package
„ Very low switching and conduction
losses
1.3 Applications
„ DC-to-DC converters
„ Electronic lighting ballasts
„ Inverters
„ Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC;
see Figure 4
Ptot total power Th 25 °C; see Figure 3
dissipation
VCESM
collector-emitter
peak voltage
VBE = 0 V
Static characteristics
hFE
VCEOsus
DC current gain
collector-emitter
sustaining voltage
IC = 500 mA; VCE = 5 V;
see Figure 11; Th = 25 °C
VCE = 5 V; IC = 3 A; see Figure 11;
Th = 25 °C
IB = 0 A; LC = 25 mH; IC = 10 mA;
see Figure 6; see Figure 7
Min Typ Max Unit
- - 4A
- - 26 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V


NXP Semiconductors Electronic Components Datasheet

BUJD203AX Datasheet

NPN power transistor

No Preview Available !

NXP Semiconductors
BUJD203AX
NPN power transistor with integrated diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B base
C collector
E emitter
n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
C
B
E
sym131
3. Ordering information
123
SOT186A (TO-220F)
Table 3. Ordering information
Type number
Package
Name
BUJD203AX
TO-220F
4. Limiting values
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
VCBO
VCEO
IC
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
VBE = 0 V
IE = 0 A
IB = 0 A
DC; see Figure 1; see Figure 2;
see Figure 4
ICM
peak collector current
see Figure 1; see Figure 2; see Figure 4
IB base current
DC
IBM peak base current
Ptot
total power dissipation
Th 25 °C; see Figure 3
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 850 V
- 850 V
- 425 V
- 4A
- 8A
- 2A
- 4A
- 26 W
-65 150 °C
- 150 °C
BUJD203AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
2 of 14


Part Number BUJD203AX
Description NPN power transistor
Maker NXP
Total Page 14 Pages
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