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BUK7905-40ATE Datasheet

(BUK7105-40ATE / BUK7905-40ATE) TrenchPLUS standard level FET

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BUK71/7905-40ATE
TrenchPLUS standard level FET
Rev. 01 — 20 August 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring both very low on-state resistance and
TrenchPLUS diodes for temperature sensing and ESD protection.
Product availability:
BUK7105-40ATE in SOT426 (D2-PAK)
BUK7905-40ATE in SOT263B (TO-220).
1.2 Features
s Integrated temperature sensor
s Electrostatic discharge protection
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 40 V
s RDSon = 4.5 m(typ)
s VF = 658 mV (typ)
s SF = 1.54 mV/K (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 anode (a)
mb
mb
3 drain (d)
4 cathode (k)
5 source (s)
12 345
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220)
Symbol
g
MBL317
da
sk


NXP Semiconductors Electronic Components Datasheet

BUK7905-40ATE Datasheet

(BUK7105-40ATE / BUK7905-40ATE) TrenchPLUS standard level FET

No Preview Available !

Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGS
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
-
-
-
[1] -
[2] -
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
[2] -
-
Ptot
IGS(CL)
total power dissipation
gate-source clamping current
Tstg
Tj
Visol(FET-TSD)
storage temperature
junction temperature
FET to temperature sense diode
isolation voltage
Tmb = 25 °C; Figure 1
continuous
tp = 5 ms; δ = 0.01
-
-
-
55
55
-
Source-drain diode
IDR reverse drain current (DC)
Tmb = 25 °C
[1] -
[2] -
IDRM
peak reverse drain current
Avalanche ruggedness
Tmb = 25 °C; pulsed; tp 10 µs
-
EDS(AL)S
non-repetitive avalanche energy
Electrostatic discharge
unclamped inductive load; ID = 75 A;
VDS 40 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25 °C
-
Vesd
electrostatic discharge voltage, pins Human Body Model; C = 100 pF;
-
1,3,5
R = 1.5 k
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Max Unit
40 V
40 V
±20 V
155 A
75 A
75 A
620 A
272
10
50
+175
+175
±100
W
mA
mA
°C
°C
V
155 A
75 A
620 A
1.46 J
6 kV
9397 750 11694
Product data
Rev. 01 — 20 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 16


Part Number BUK7905-40ATE
Description (BUK7105-40ATE / BUK7905-40ATE) TrenchPLUS standard level FET
Maker NXP
Total Page 16 Pages
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