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BUK9107-55ATE Datasheet

N-channel TrenchPLUS logic level FET

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BUK9107-55ATE
N-channel TrenchPLUS logic level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Q101 compliant
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tj 25 °C; Tj 175 °C
VGS = 5 V; Tmb = 25 °C; see Figure 2 and 3
Tmb = 25 °C; see Figure 1
RDSon
SF(TSD)
drain-source on-state
resistance
VGS = 4.5 V; ID = 50 A; Tj = 25 °C
VGS = 10 V; ID = 50 A; Tj = 25 °C
VGS = 5 V; ID = 50 A; Tj = 25 °C; see Figure 7 and 8
temperature sense diode IF = 250 µA; Tj > -55 °C; Tj < 175 °C
temperature coefficient
VF(TSD) temperature sense diode IF = 250 µA; Tj = 25 °C
forward voltage
Min
-
[1] -
-
-55
-
-
-
-1.4
648
Typ Max Unit
- 55 V
- 140 A
- 272 W
- 175 °C
6 7.7 m
5.2 6.2 m
5.8 7
m
-1.54 -1.68 mV/K
658 668 mV
[1] Current is limited by power dissipation chip rating.


NXP Semiconductors Electronic Components Datasheet

BUK9107-55ATE Datasheet

N-channel TrenchPLUS logic level FET

No Preview Available !

NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2A
anode
3D
drain
4K
cathode
5S
source
mb D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
3
12 45
SOT426
(D2PAK)
Graphic symbol
DA
G
SK
mbl317
Table 3. Ordering information
Type number
Package
Name
Description
BUK9107-55ATE D2PAK
plastic single-ended surface-mounted package (D2PAK); 5 leads (one
lead cropped)
Version
SOT426
BUK9107-55ATE_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
2 of 15


Part Number BUK9107-55ATE
Description N-channel TrenchPLUS logic level FET
Maker NXP
Total Page 15 Pages
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