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BUK9775-55A - N-channel TrenchMOS logic level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Product availability: BUK9775-55A in SOT186A (TO-220F).

2.

Features

  • s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BUK9775-55A N-channel TrenchMOS™ logic level FET M3D308 Rev. 02 — 10 June 2004 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9775-55A in SOT186A (TO-220F). 2. Features s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; isolated g mbb076 d s 1 2 3 MBK110 SOT186A (TO-220F) 1.
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