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BYV32E-200P Datasheet Dual ultrafast power diode

Manufacturer: NXP Semiconductors

Overview: TO-220AB BYV32E-200P Dual ultrafast power diode 14 May 2015 Product data sheet 1.

General Description

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package 2.

Key Features

  • Ultra low leakage current.
  • High junction temperature up to 175 °C.
  • Low on-state loss.
  • Fast switching.
  • Soft recovery characteristic minimizes power consuming oscillations.
  • High reverse surge capability.
  • High thermal cycling performance.
  • Low thermal resistance 3.