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BYV430W-300P Datasheet

Dual ultrafast power diode

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BYV430W-300P
Dual ultrafast power diode
1 September 2015
Product data sheet
1. General description
2x30A, 300V dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2. Features and benefits
Low forward voltage drop
Fast Switching
Soft recovery characteristics
High thermal cycling performance
Low thermal resistance
3. Applications
Telecom power supplies
Welding machines
Secondary rectification in SMPS
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 103 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3
IO(AV)
average output current δ = 0.5 ; Tmb ≤ 103 °C; square-wave
pulse; both diodes conducting
IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; square-wave
current
pulse; per diode
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave
forward current
pulse; per diode; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; per diode; Fig. 4
Static characteristics
VF
forward voltage
IF = 30 A; Tj = 25 °C; Fig. 6
IF = 30 A; Tj = 150 °C; Fig. 6
Min Typ Max Unit
- - 300 V
- - 30 A
- - 60 A
- - 60 A
- - 300 A
- - 330 A
- 1 1.25 V
-
0.85 1
V
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NXP Semiconductors Electronic Components Datasheet

BYV430W-300P Datasheet

Dual ultrafast power diode

No Preview Available !

NXP Semiconductors
BYV430W-300P
Dual ultrafast power diode
Symbol
Parameter
Conditions
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
Min Typ Max Unit
- - 50 ns
- 33 - ns
- 62 - ns
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A1 anode 1
2 K cathode
3 A2 anode 2
mb K
mounting base; cathode
Simplified outline
Graphic symbol
A1 A2
K
sym125
123
TO-247 (SOT429)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYV430W-300P
TO-247
Description
plastic single-ended through-hole package; heatsink
mounted; 1 mounting hole; 3 lead TO-247
Version
SOT429
7. Marking
Table 4. Marking codes
Type number
BYV430W-300P
Marking code
BYV430W-300P
BYV430W-300P
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 11


Part Number BYV430W-300P
Description Dual ultrafast power diode
Maker NXP
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