• Part: BYV430W-300P
  • Description: Dual ultrafast power diode
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 159.40 KB
Download BYV430W-300P Datasheet PDF
NXP Semiconductors
BYV430W-300P
description 2x30A, 300V dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package. 2. Features and benefits - Low forward voltage drop - Fast Switching - Soft recovery characteristics - High thermal cycling performance - Low thermal resistance 3. Applications - Tele power supplies - Welding machines - Secondary rectification in SMPS 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 103 °C; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 IO(AV) average output current δ = 0.5 ; Tmb ≤ 103 °C; square-wave pulse; both diodes conducting IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; square-wave current pulse; per diode IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave forward current pulse;...