Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage (<8 Ω for J108).
APPLICATIONS
• Analog switches
• Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN SYMBOL
1g
2s
3d
DESCRIPTION
gate
source
drain
1
handbook, halfpage2
3
g
MAM197
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
IDSS drain current
J108
J109
J110
Ptot total power dissipation
CONDITIONS
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 5 V
up to Tamb = 50 °C
MIN. MAX. UNIT
− ±25 V
−3 −10
−2 −6
−0.5 −4
V
V
V
80 −
mA
40 −
mA
10 −
mA
− 400 mW
1996 Jul 30
2
