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J110 - N-channel silicon junction FETs

Description

N-channel symmetrical silicon junction field-effect transistors in a TO-92 package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • High speed switching.
  • Interchangeability of drain and source connections.
  • Low RDSon at zero gate voltage (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS • Analog switches • Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
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