JC557 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 65 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN plements: JC546, JC547 and JC548. 1 handbook, halfpage JC556; JC557; JC558 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO JC556 JC557 JC558 VCEO collector-emitter voltage JC556 JC557 JC558 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base - - - - - - - - - 65 - - 65 - 65 - 45 - 30 - 5 - 100 - 200 - 200 500 +150 150 +150 V V V V m A m A m A m W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - - - 80 - 50 - 30 V V V MIN. MAX. UNIT 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE VCEsat VBEsat VBE Cc Ce f T F Notes 1. VBEsat decreases by about - 1.7 m V/K with increasing temperature. 2. VBE decreases by about - 2 m V/K with increasing temperature. PARAMETER collector cut-off current emitter cut-off current DC current gain JC556B; JC557B; JC558B collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = - 10 m A; IB...