MC33GD3100
Description
The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices.
Key Features
- This section summarizes the key features, safety features, and regulatory approvals. 3.1 Key features
- SPI interface for safety monitoring, programmability and flexibility
- Low propagation delay and minimal PWM distortion
- Integrated Galvanic signal isolation (up to 8 kV)
- Integrated gate drive power stage capable of 15 A peak source and sink
- Fully programmable Active Miller Clamp
- Integrated soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping
- CMTI > 100 V/ns
- Operating temperature range -40 °C to 125 °C
- External Creepage distance (CPG): > 7.8 mm