• Part: MC33GD3100
  • Description: Advanced IGBT/SiC gate driver
  • Manufacturer: NXP Semiconductors
  • Size: 503.27 KB
MC33GD3100 Datasheet (PDF) Download
NXP Semiconductors
MC33GD3100

Description

The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices.

Key Features

  • This section summarizes the key features, safety features, and regulatory approvals. 3.1 Key features
  • SPI interface for safety monitoring, programmability and flexibility
  • Low propagation delay and minimal PWM distortion
  • Integrated Galvanic signal isolation (up to 8 kV)
  • Integrated gate drive power stage capable of 15 A peak source and sink
  • Fully programmable Active Miller Clamp
  • Integrated soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping
  • CMTI > 100 V/ns
  • Operating temperature range -40 °C to 125 °C
  • External Creepage distance (CPG): > 7.8 mm