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MC33GD3100 - Advanced IGBT/SiC gate driver

General Description

The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices.

Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.

Key Features

  • This section summarizes the key features, safety features, and regulatory approvals. 3.1 Key features.
  • SPI interface for safety monitoring, programmability and flexibility.
  • Low propagation delay and minimal PWM distortion.
  • Integrated Galvanic signal isolation (up to 8 kV).
  • Integrated gate drive power stage capable of 15 A peak source and sink.
  • Fully programmable Active Miller Clamp.
  • Compatible with negative gate supply.
  • Compatible wi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOIC32 MC33GD3100 Advanced IGBT/SiC gate driver Rev. 9.0 — 5 March 2020 Product short data sheet 1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults. Accurate and configurable under voltage lockout (UVLO) provides protection while ensuring sufficient gate drive voltage headroom. The MC33GD3100 autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs.