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MHL9838 Datasheet

RF Linear LDMOS Amplifier

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Freescale Semiconductor
Technical Data
Replaced by MHL9838N. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
Third Order Intercept: 50 dBm Typ
Power Gain: 31 dB Typ (@ f = 880 MHz)
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
For Use in TDMA and CDMA Multi - Carrier Applications
MHL9838
Rev. 4, 1/2005
MHL9838
800 - 925 MHz
8.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
DC Supply Voltage
VDD
RF Input Power
Pin
Storage Temperature Range
Tstg
Operating Case Temperature Range
TC
Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 System)
Characteristic
Symbol
Supply Current
Power Gain
(f = 880 MHz)
Gain Flatness
(f = 800 - 925 MHz)
Power Output @ 1 dB Comp.
(f = 880 MHz)
Input VSWR
(f = 800 - 925 MHz)
Output VSWR
(f = 800 - 925 MHz)
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
IDD
Gp
GF
Pout 1 dB
VSWRin
VSWRout
ITO
Noise Figure
(f = 925 MHz)
NF
Value
30
+6
- 40 to +100
- 20 to +100
Min
Typ
Max
770
800
30
31
32
0.1
0.3
39
1.2:1 1.5:1
1.2:1 1.5:1
49
50
3.7
4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL9838
1


NXP Semiconductors Electronic Components Datasheet

MHL9838 Datasheet

RF Linear LDMOS Amplifier

No Preview Available !

TYPICAL CHARACTERISTICS
40
60
Gp
55
20
VDD = 28 Vdc
TC = 25°C
50
ITO
0
−20
−40
400
ORL
IRL
VDD = 28 Vdc
TC = 25°C
800
1200
1600
2000
f, FREQUENCY (MHz)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
45
40
P1dB
35
30
500 600 700 800 900 1000 1100 1200
f, FREQUENCY (MHz)
Figure 2. P1dB, ITO versus Frequency
33
820
32
VDD = 28 Vdc 800
f = 880 MHz
Gp
31
780
30
IDD
760
29
740
28
−40 −20
0 20 40 60
TEMPERATURE (°C)
720
80 100 120
Figure 3. Power Gain, IDD versus Temperature
52
41
50
ITO
40
48
39
P1dB
46
38
44
37
42
VDD = 28 Vdc
f = 880 MHz
36
40
−40 −20
0 20 40 60
TEMPERATURE (°C)
35
80 100 120
Figure 4. ITO, P1dB versus Temperature
−420
−425
−430
PHASE
−435
VDD = 28 Vdc
f = 880 MHz
2.2
2.1
−440
GROUP DELAY
2.0
−445
1.9
−450
−40 −20
0 20 40 60
TEMPERATURE (°C)
1.8
80 100 120
Figure 5. Phase(1), Group Delay(1) versus Temperature
1. In Production Test Fixture
MHL9838
2
0.30
0.80
0.25
VDD = 28 Vdc
f = 800−925 MHz
0.70
0.20
0.60
0.15
0.50
GF
0.10
0.40
PHASE LINEARITY
0.05
0.30
0
−40 −20
0 20 40 60
TEMPERATURE (°C)
0.20
80 100 120
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
RF Device Data
Freescale Semiconductor


Part Number MHL9838
Description RF Linear LDMOS Amplifier
Maker NXP
Total Page 3 Pages
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