* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* Qualified for operation at 32 Vdc
* Integrated ESD protection
* 150C case operating temperature
* 150C die temperature capability Target Applications
MHT1008N Datasheet (400.00 KB)
MHT1008N
400.00 KB
Rf power ldmos transistor.
Freescale Semiconductor Technical Data Document Number: MHT1008N Rev. 0, 5/2016 RF Power LDMOS Transistor N Channel Enhancement Mode.
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