MHT1008N Description
Freescale Semiconductor Technical Data Document Number: 0, 5/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 12.5 W CW high efficiency RF power transistor is designed for consumer and mercial cooking applications operating in the 2450 MHz ISM band.
MHT1008N Key Features
- Characterized with series equivalent large--signal impedance parameters and
- Qualified for operation at 32 Vdc
- Integrated ESD protection
- 150C case operating temperature
- 150C die temperature capability