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MHT1008N Datasheet, NXP

MHT1008N transistor equivalent, rf power ldmos transistor.

MHT1008N Avg. rating / M : 1.0 rating-14

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MHT1008N Datasheet

Features and benefits


* Characterized with series equivalent large--signal impedance parameters and common source S--parameters
* Qualified for operation at 32 Vdc
* Integrated ESD.

Application

operating in the 2450 MHz ISM band. Typical Performance: VDD = 28 Vdc, IDQ = 110 mA Frequency (MHz) Signal Type Gps .

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