MHT1008N
Overview
- Characterized with series equivalent large--signal impedance parameters and common source S--parameters
- Qualified for operation at 32 Vdc
- Integrated ESD protection
- 150°C case operating temperature
- 150°C die temperature capability Target Applications
- Consumer cooking as PA driver
- Commercial cooking as PA driver Gate Drain (Top View) Note: The center pad on the backside of the package is the source terminal for the transistor. Figure
- Pin Connections Freescale Semiconductor, Inc.,
- All rights reserved. RF Device Data Freescale Semiconductor, Inc.
