MM912J637 Datasheet | NXP Semiconductors

Features - Battery voltage measurement - Battery current measurement in up to 8 ranges - On chip temperature measurement - Normal and two low-power modes - Current threshold detection and current averaging in standby => wake-up from low-power mode - Triggered wake-up from LIN and periodic wake-up - Signal low pass filtering (current, voltage) - PGA (programmable low-noise gain amplifier) with automatic gain control - Accurate internal oscillator (an external quartz oscillator may be used for extended accuracy) - munication via a LIN 2.1, LIN2.0 bus interface - S12 microcontroller with 128 k Byte flash, 6.0 k Byte RAM, 4.0 k Byte data flash - Background debug module - External temperature sensor option (TSUP, VTEMP) - Optional 2nd external voltage sense input (VOPT) - 4 x 5.0 V GPIO including one wake-up capable high voltage input (PTB3/L0) - 8 x MCU general purpose I/O including SPI functionality - Industry standard EMC pliance Battery Monitoring System EP SUFFIX (WF-TYPE) SOT619-16 48-PIN QFN EP SUFFIX (WF-TYPE) SOT619-25(D) 48-PIN QFN Applications - 12 V Lead-acid battery monitoring ADC Supply 2.5 V Supply 5.0 V Supply Digital Ground Reset 5.0 V Digital I/O Debug and External Oscillator MCU Test MM912_637 VDDA AGND ADCGND VDDL VDDH VDDD2D VDDX VDDRX Internal Temp Sense Module LGND TSUP VTEMP VOPT VSENSE DGND VSSD2D...