MMBD4148 Datasheet, NXP

I High switching speed: trr ≤ 4 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 75 V 1.3 Applications I High-speed switching I General-purpose switchin.

I High-speed switching I General-purpose switching I Low capacitance I Reverse voltage: VR ≤ 75 V I Small SMD plastic p.

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features I High switching speed: trr ≤ 4 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 75 V 1.3 Applications .