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MMZ09332BT1 - Heterojunction Bipolar Transistor

Description

Part Number C1 6.8 pF Chip Capacitor GJM1555C1H6R8DB01ND C2 2.4 pF Chip Capacitor GJM1555C1H2R4DB01ND C3 220 pF Chip Capacitor GRM1555C1H221GA01ND C4 4.7 pF Chip Capacitor GJM1555C1H4R7DB01ND C5 8.2 pF Chip Capacitor GJM1555C1H8R2DB01ND C6, C7, C13 100 pF Chip Capacitors GRM1555C1

Features

  • Frequency: 130.
  • 1000 MHz.
  • P1dB: 33 dBm, 450 to 1000 MHz.
  • OIP3: up to 48 dBm @ 900 MHz.
  • Excellent Linearity.
  • Active Bias Control (adjustable externally).
  • Single 3 to 5 V Supply.
  • Single--ended Power Detector.
  • Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package Power VBA1 VBA2 VBIAS Down VCC1 ACTIVE BIAS WITH POWER DOWN Document Number: MMZ09332B Rev. 0, 8/2015 MMZ09332BT1 130.
  • 1000 MHz, 30 dB, 33 dBm InGaP HBT LINEAR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.
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