Overview: Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.
Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 140 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) ICC (mA) Test Signal 748 MHz 23 30.9 –49.6 315 W--CDMA 942 MHz 22 27.1 –50.4 240 W--CDMA Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 110 mA Frequency Pout (dBm) Gps (dB) PAE (%) Test Signal 450 MHz 32.3 37.2 45.5 @ 5 V CW 30.3 @ 3.6 V 26.3 @ 3.6 V 53.7 @ 3.6 V 760 MHz 32.2 30.8 40.
