MMZ09332BT1 Description
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of 50 dBc at an output...
MMZ09332BT1 Key Features
- Frequency: 130-1000 MHz
- P1dB: 33 dBm, 450 to 1000 MHz
- OIP3: up to 48 dBm @ 900 MHz
- Excellent Linearity
- Active Bias Control (adjustable externally)
- Single 3 to 5 V Supply
- Single--ended Power Detector
- Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package
- 65 to +150 175