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MMZ09332BT1 Datasheet

Heterojunction Bipolar Transistor

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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier
designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE
wireless broadband applications. It provides exceptional linearity for LTE and
W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to
23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply
voltage of 3 to 5 volts. The amplifier requires minimal external matching and
offers state--of--the--art reliability, ruggedness, temperature stability and ESD
performance.
Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 140 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
ICC
(mA)
Test Signal
748 MHz
23
30.9
–49.6
315
W--CDMA
942 MHz
22
27.1
–50.4
240
W--CDMA
Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 110 mA
Frequency
Pout
(dBm)
Gps
(dB)
PAE
(%)
Test Signal
450 MHz
32.3
37.2
45.5 @ 5 V
CW
30.3 @ 3.6 V 26.3 @ 3.6 V 53.7 @ 3.6 V
760 MHz
32.2
30.8
40.0 @ 5 V
CW
Features
Frequency: 130–1000 MHz
P1dB: 33 dBm, 450 to 1000 MHz
OIP3: up to 48 dBm @ 900 MHz
Excellent Linearity
Active Bias Control (adjustable externally)
Single 3 to 5 V Supply
Single--ended Power Detector
Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package
Power
VBA1 VBA2 VBIAS Down
VCC1
ACTIVE BIAS WITH
POWER DOWN
Document Number: MMZ09332B
Rev. 0, 8/2015
MMZ09332BT1
130–1000 MHz, 30 dB, 33 dBm
InGaP HBT LINEAR AMPLIFIER
QFN 3 3
RFin
INPUT
PREMATCH
INTERSTAGE
MATCH
OUTPUT
PREMATCH
VCC2/
RFout
OUTPUT POWER
DETECTOR
PDET
Figure 1. Functional Block Diagram
Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ09332BT1
1


NXP Semiconductors Electronic Components Datasheet

MMZ09332BT1 Datasheet

Heterojunction Bipolar Transistor

No Preview Available !

Table 1. Maximum Ratings
Rating
Supply Voltage
Total Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 93C, VCC1 = VCC2 = VBIAS = 5 Vdc
Stage 1
Stage 2
Symbol
VCC
ICC
Pin
Tstg
TJ
Symbol
RJC
Value
6
1200
29
–65 to +150
175
Value (1)
51
26
Unit
V
mA
dBm
C
C
Unit
C/W
Table 3. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 760 MHz, TA = 25C, 50 ohm system, in Freescale PA Driver
Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Intercept Point, Two--Tone CW
Power Down Voltage
Power Down Current
Supply Current
Supply Voltage
Table 4. ESD Protection Characteristics
Test Methodology
Bias “On”
Bias “Off”
Bias “On”
Bias “Off”
Symbol
Gp
IRL
ORL
P1dB
OIP3
ICQ
VCC
Min
28.7
0
1.4
0
0.018
88
Typ
Max
30.5
–12
–12
32.8
43
1.0
2.0
0
1.38
108
128
5
Class
Unit
dB
dB
dB
dBm
dBm
V
mA
mA
V
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 5. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
Table 6. Ordering Information
Device
MMZ09332BT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
Package
QFN 3 3
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
MMZ09332BT1
2
Power
VBA2 VCC1 Down
12 11 10
VBA1 1
VBIAS 2
RFin 3
9 VCC2/RFout
8 VCC2/RFout
7 VCC2/RFout
456
N.C. N.C. PDET
Figure 2. Pin Connections
RF Device Data
Freescale Semiconductor, Inc.


Part Number MMZ09332BT1
Description Heterojunction Bipolar Transistor
Maker NXP
Total Page 3 Pages
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