MMZ09332BT1 Datasheet | NXP Semiconductors

Features - Frequency: 130- 1000 MHz - P1d B: 33 d Bm, 450 to 1000 MHz - OIP3: up to 48 d Bm @ 900 MHz - Excellent Linearity - Active Bias Control (adjustable externally) - Single 3 to 5 V Supply - Single--ended Power Detector - Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package Power VBA1 VBA2 VBIAS Down VCC1 ACTIVE BIAS WITH POWER DOWN Document Number: MMZ09332B Rev. 0, 8/2015 130- 1000 MHz, 30 d B, 33 d Bm In Ga P HBT LINEAR AMPLIFIER QFN 3  3 RFin INPUT PREMATCH INTERSTAGE MATCH OUTPUT PREMATCH VCC2/ RFout OUTPUT POWER DETECTOR PDET Figure 1. Functional Block Diagram  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ09332BT1 1 Table 1. Maximum Ratings Rating Supply Voltage Total Supply Current RF Input Power Storage Temperature Range Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 93C, VCC1 = VCC2 = VBIAS = 5 Vdc Stage...