MMZ25333B - InGaP HBT Linear Amplifier

NXP Semiconductors

General Description

The MMZ25333B is a versatile 3 stage power amplifier targeted at driver and pre driver applications for macro and micro base stations and final

stage applications for small cells.

Key Features

P1dB: up to 33 dBm.
Gain: More than 40 dB.
5 V Supply.
Excellent Linearity.
High Efficiency.
Single.
ended Power Detector.
Band Tunable NXP Semiconductors 4 Functional block diagram VCC1/ RFout1 RFin2 VCC2 PDET RFin1 BIAS.

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MMZ25333B ingap hbt linear amplifier by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	MMZ25333B
Manufacturer	NXP Semiconductors
File Size	348.51 KB
Description	InGaP HBT Linear Amplifier
Datasheet	MMZ25333B Datasheet

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Full PDF Text Transcription (Reference)

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MMZ25333B InGaP HBT Linear Amplifier Rev. 2 — 4 April 2024 Product data sheet 1 General description The MMZ25333B is a versatile 3−stage power amplifier targeted at driver and pre−driver applications for macro and micro base stations and final−stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 × 4 surface mount package. 2 Typical performance Table 1. Typical PA Driver Performance VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 265 mA Frequency Pout (dBm) Gps (dB) 2600 MHz 2140 MHz 18.0 42.6 17.