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MMZ25333B Datasheet Ingap Hbt Linear Amplifier

Manufacturer: NXP Semiconductors

Overview: MMZ25333B InGaP HBT Linear Amplifier Rev. 2 — 4 April 2024 Product data sheet 1.

General Description

The MMZ25333B is a versatile 3−stage power amplifier targeted at driver and pre−driver applications for macro and micro base stations and final−stage applications for small cells.

Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB.

The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application.

Key Features

  • P1dB: up to 33 dBm.
  • Gain: More than 40 dB.
  • 5 V Supply.
  • Excellent Linearity.
  • High Efficiency.
  • Single.
  • ended Power Detector.
  • Band Tunable NXP Semiconductors 4 Functional block diagram VCC1/ RFout1 RFin2 VCC2 PDET RFin1 BIAS.

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