Datasheet Summary
NXP Semiconductors Technical Data
2 W High Gain Power Amplifier for Cellular Infrastructure
InGaP GaAs HBT
The MMZ27333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 × 4 surface mount package.
- Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ...