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NXP Semiconductors Electronic Components Datasheet

MMZ27333BT1 Datasheet

High Gain Power Amplifier

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NXP Semiconductors
Technical Data
2 W High Gain Power Amplifier for
Cellular Infrastructure
InGaP GaAs HBT
The MMZ27333B is a versatile 3--stage power amplifier targeted at driver and
pre--driver applications for macro and micro base stations and final--stage
applications for small cells. Its versatile design allows operation in any
frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The
device operates off a 5 V supply, and its bias currents and portions of the
matching networks are adjustable for optimum performance in any specific
application. It is housed in a QFN 4 × 4 surface mount package.
Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc,
ICQ = 430 mA.
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
ICC
Total
Test Signal
2140 MHz
22.3
35.8
–48.0
499
W--CDMA
2600 MHz
21.3
36.1
–48.0
498
LTE 20 MHz
Features
P1dB: up to 33 dBm
Gain: More than 35 dB
5 V Supply
Excellent Linearity
High Efficiency
Single--ended Power Detector
Band Tunable
Cost--effective 24--pin, 4 mm QFN surface mount plastic package
Document Number: MMZ27333B
Rev. 1, 02/2017
MMZ27333BT1
1500–2700 MHz, 35 dB, 33 dBm
InGaP HBT LINEAR AMPLIFIER
QFN 4 × 4
RFin1
VCC1/
RFout1 RFin2
VCC2
PDET
BIAS
CIRCUIT
VCC3/RFout3
VCC3/RFout3
VCC3/RFout3
VBA1
VBA2
VBIAS
Figure 1. Functional Block Diagram
© 2016–2017 NXP B.V.
RF Device Data
NXP Semiconductors
MMZ27333BT1
1


NXP Semiconductors Electronic Components Datasheet

MMZ27333BT1 Datasheet

High Gain Power Amplifier

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95°C, VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICC1
ICC2
ICC3
Stage 1
Stage 2
Stage 3
VCC
ICC
Pin
Tstg
TJ
Symbol
RθJC
6
68
240
960
10
–65 to +150
175
Value (1)
75
79
21
V
mA
dBm
°C
°C
Unit
°C/W
Table 3. Electrical Characteristics (VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, 2600 MHz, TA = 25°C, 50 ohm system, in NXP PA Driver
Application Circuit tuned for LTE application)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
Gp
34.8
35.8
dB
IRL
17
dB
Output Return Loss (S22)
ORL
13.3
dB
Power Output @ 1dB Compression
P1dB
32.2
dBm
Total Supply Current (ICC1 + ICC2 + ICC3 + IBIAS)
Supply Voltage
Table 4. ESD Protection Characteristics
ICQ
420
430
445
mA
VCC
5
V
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 5. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
°C
Table 6. Ordering Information
Device
MMZ27333BT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
Package
QFN 4 × 4
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
MMZ27333BT1
2
RF Device Data
NXP Semiconductors


Part Number MMZ27333BT1
Description High Gain Power Amplifier
Maker NXP
Total Page 3 Pages
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