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NXP Semiconductors Technical Data
2 W High Gain Power Amplifier for Cellular Infrastructure
InGaP GaAs HBT
The MMZ27333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 × 4 surface mount package.
• Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 430 mA.
Frequency
Pout (dBm)
Gps (dB)
ACPR (dBc)
ICC Total
Test Signal
2140 MHz
22.3
35.
MMZ27333BT1 Datasheet
