MMZ27333BT1 Description
NXP Semiconductors Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ27333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The device...
MMZ27333BT1 Key Features
- P1dB: up to 33 dBm
- Gain: More than 35 dB
- 5 V Supply
- Excellent Linearity
- High Efficiency
- Single--ended Power Detector
- Band Tunable
- Cost--effective 24--pin, 4 mm QFN surface mount plastic package