900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

MMZ38333BT1 Datasheet

3.8 GHz Linear Power Amplifier and BTS Driver

No Preview Available !

NXP Semiconductors
Technical Data
3.8 GHz Linear Power Amplifier and
BTS Driver
High Efficiency/Linearity Amplifier
The MMZ38333B is a 3--stage high linearity InGaP HBT broadband amplifier
designed for small cells and LTE base stations. It provides exceptional linearity
for LTE air interface with an ACPR of –48 dBc at an output power greater than
22.3 dBm, covering frequencies from 3400 to 3800 MHz. It operates off a 5 V
supply voltage. The amplifier is internally pre--matched with the flexibility to
change external matching to suit the final application and offers state--of--the--
art reliability, ruggedness, temperature stability and ESD performance.
Typical Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Frequency
3500 MHz (1)
3500 MHz (2)
3500 MHz (3)
3700 MHz (1)
3700 MHz (2)
3700 MHz (3)
Pout
(dBm)
22.3
17.4
22.6
21.6
18.2
22.8
Gps
(dB)
38.2
36.7
38.3
38.0
37.0
37.7
ACPR
(dBc)
–48.0
–48.0
–48.0
–48.0
–48.0
–48.0
ICC
(mA)
482
242
460
470
260
495
Test Signal
LTE 20 MHz
1. High bias, high linearity. 2. Low bias, high linearity. 3. High power.
Features
Frequency: 3400–3800 MHz
P1dB: 31.7 dBm @ 3600 MHz
Power gain: 37 dB @ 3600 MHz
Active bias control (adjustable externally)
Power down control via VBIAS
5 volt supply
Cost--effective 24--pin, 4 mm QFN surface mount plastic package
VCC1/
RFout1 RFin2
VCC2
PDET
RFin1
BIAS
CIRCUIT
Document Number: MMZ38333B
Rev. 0, 01/2017
MMZ38333BT1
3400–3800 MHz, 37 dB, 32 dBm
InGaP HBT LINEAR AMPLIFIER
QFN 4 × 4
VCC3/RFout3
VCC3/RFout3
VCC3/RFout3
VBA1
VBA2
VBIAS
Figure 1. Functional Block Diagram
© 2017 NXP B.V.
RF Device Data
NXP Semiconductors
MMZ38333BT1
1


NXP Semiconductors Electronic Components Datasheet

MMZ38333BT1 Datasheet

3.8 GHz Linear Power Amplifier and BTS Driver

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Table 2. Thermal Characteristics
VCC
6
V
ICC
1200
mA
Pin
30
dBm
Tstg
–65 to +150
°C
TJ
175
°C
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC
°C/W
Case Temperature 90°C, VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Stage 1
69
Stage 2
83
Stage 3
26
Table 3. Electrical Characteristics (VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, 3600 MHz, TA = 25°C, 50 ohm system, in NXP CW
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Supply Current
Supply Voltage
Table 4. ESD Protection Characteristics
Gp
36.3
37.9
dB
IRL
18.1
dB
ORL
13.0
dB
P1dB
31.7
dBm
ICQ
349
376
404
mA
VCC
5
V
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Charge Device Model (per JESD22--C101)
C3
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
1
260
°C
Table 6. Ordering Information
Device
MMZ38333BT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
Package
QFN 4 × 4
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
MMZ38333BT1
2
RF Device Data
NXP Semiconductors


Part Number MMZ38333BT1
Description 3.8 GHz Linear Power Amplifier and BTS Driver
Maker NXP
Total Page 3 Pages
PDF Download

MMZ38333BT1 Datasheet PDF

View PDF for Mobile






Similar Datasheet

1 MMZ38333BT1 3.8 GHz Linear Power Amplifier and BTS Driver
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy