MMZ38333BT1 Datasheet 3.8 GHz Linear Power Amplifier and BTS Driver

Manufacturer: NXP Semiconductors

MMZ38333BT1 3.8 ghz linear power amplifier and bts driver by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	MMZ38333BT1
Manufacturer	NXP Semiconductors
File Size	1.38 MB
Description	3.8 GHz Linear Power Amplifier and BTS Driver
Download	MMZ38333BT1 Download (PDF)

Overview

NXP Semiconductors Technical Data 3.8 GHz Linear Power Amplifier and BTS Driver High Efficiency/Linearity Amplifier The MMZ38333B is a 3--stage high linearity InGaP HBT broadband amplifier designed for small cells and LTE base stations.

It provides exceptional linearity for LTE air interface with an ACPR of –48 dBc at an output power greater than 22.3 dBm, covering frequencies from 3400 to 3800 MHz.

It operates off a 5 V supply voltage.

Key Features

Frequency: 3400.
3800 MHz.
P1dB: 31.7 dBm @ 3600 MHz.
Power gain: 37 dB @ 3600 MHz.
Active bias control (adjustable externally).
Power down control via VBIAS.
5 volt supply.
Cost--effective 24--pin, 4 mm QFN surface mount plastic package VCC1/ RFout1 RFin2 VCC2 PDET RFin1 BIAS.

More Datasheets from NXP Semiconductors

Part Number	Description
MMZ09332BT1	Heterojunction Bipolar Transistor
MMZ25332BT1	Heterojunction Bipolar Transistor
MMZ25333B	InGaP HBT Linear Amplifier
MMZ27333BT1	High Gain Power Amplifier