MRF6V2300NR1 Datasheet - NXP

MRF6V2300NR1 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for CW large signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain 25.5 dB Drain Efficiency 68% <.

MRF6V2300NR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per

MRF6V2300NR1 Datasheet (1.22 MB)