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NXP Semiconductors Electronic Components Datasheet

MRF6V2300NR1 Datasheet

RF Power FET

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,
Pout = 300 Watts, f = 220 MHz
Power Gain — 25.5 dB
Drain Efficiency — 68%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V2300N
Rev. 5, 4/2010
MRF6V2300NR1
MRF6V2300NBR1
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V2300NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V2300NBR1
PARTS ARE SINGLE--ENDED
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Symbol
VDSS
VGS
Tstg
TC
TJ
Value
--0.5, +110
--0.5, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Symbol Value (2,3) Unit
RθJC
0.24
°C/W
RFin/VGS
RFout/VDS
RFin/VGS
RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
1


NXP Semiconductors Electronic Components Datasheet

MRF6V2300NR1 Datasheet

RF Power FET

No Preview Available !

Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 150 mA, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
2.5
mA
IDSS
50
μAdc
V(BR)DSS
110
Vdc
IGSS
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 800 μAdc)
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VGS(th)
1
1.63
3
Vdc
VGS(Q)
1.5
2.6
3.5
Vdc
VDS(on)
0.28
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Crss
2.88
pF
Coss
120
pF
Ciss
268
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW
Power Gain
Gps
24
25.5
27
dB
Drain Efficiency
ηD
66
68
%
Input Return Loss
IRL
--16
--9
dB
Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW
Power Gain
f = 27 MHz
f = 450 MHz
Gps
31.4
dB
21.7
Drain Efficiency
f = 27 MHz
f = 450 MHz
ηD
61.5
%
59.1
Input Return Loss
f = 27 MHz
f = 450 MHz
IRL
--17.4
dB
--24.4
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V2300NR1 MRF6V2300NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF6V2300NR1
Description RF Power FET
Maker NXP
Total Page 3 Pages
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