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NXP Semiconductors Electronic Components Datasheet

MRF6VP11KHR6 Datasheet

RF Power FET

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for pulse wideband applications with frequencies up to
150 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
Document Number: MRF6VP11KH
Rev. 8, 9/2012
MRF6VP11KHR6
MRF6VP11KGSR5
1.8--150 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05
STYLE 1
NI--1230--4
MRF6VP11KHR6
CASE 2282--02
NI--1230S--4 GULL
MRF6VP11KGSR5
PARTS ARE PUSH--PULL
Table 1. Maximum Ratings
RFinA/VGSA 3
1 RFoutA/VDSA
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Symbol Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 67°C, 1000 W CW, 100 MHz
RθJC
0.13
°C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle
ZθJC
0.03
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
1


NXP Semiconductors Electronic Components Datasheet

MRF6VP11KHR6 Datasheet

RF Power FET

No Preview Available !

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2000 V
Machine Model (per EIA/JESD22--A115)
A, passes 125 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 300 mA, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IGSS
10
μAdc
V(BR)DSS
110
Vdc
IDSS
100
μAdc
IDSS
5
mA
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.63
3
Vdc
Gate Quiescent Voltage (2)
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
0.28
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
3.3
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
147
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
506
pF
Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130
MHz, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Gps
24
26
28
dB
ηD
69
71
%
Input Return Loss
IRL
--16
--9
dB
1. Each side of device measured separately.
2. Measurements made with device in push--pull configuration.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
MRF6VP11KHR6 MRF6VP11KGSR5
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number MRF6VP11KHR6
Description RF Power FET
Maker NXP
Total Page 3 Pages
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