MRF6VP11KHR6 Datasheet | NXP Semiconductors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. - Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 m A, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain - 26 d B Drain Efficiency - 71% - Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power Features - Characterized with Series Equivalent Large--Signal Impedance Parameters - CW Operation Capability with Adequate Cooling - Qualified Up to a Maximum of 50 VDD Operation - Integrated ESD Protection - Designed for Push--Pull Operation - Greater Negative Gate--Source Voltage Range for Improved Class C Operation - In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel. Document Number: MRF6VP11KH Rev. 8, 9/2012 MRF6VP11KHR6 MRF6VP11KGSR5 1.8--150 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 375D--05 STYLE 1 NI--1230--4 CASE 2282--02 NI--1230S--4 GULL MRF6VP11KGSR5 PARTS ARE PUSH--PULL Table 1. Maximum Ratings RFin A/VGSA 3 1 RFout A/VDSA Rating Symbol Value...