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MRF6VP11KHR6 Datasheet RF Power FET

Manufacturer: NXP Semiconductors

Overview: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.

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Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • CW Operation Capability with Adequate Cooling.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Push--Pull Operation.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel. Doc.

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