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MRF9045MR1 - RF Power FET

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.