900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

MRF9045MR1 Datasheet

RF Power FET

No Preview Available !

Freescale Semiconductor
Technical Data
MRF9045MR1
Rev. 9, 5/2006
Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applica-
tions in 28 volt base station equipment.
Typical Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 19 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
200_C Capable Plastic Package
TO - 272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO - 270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MRF9045MR1
MRF9045MBR1
945 MHz, 45 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270
PLASTIC
MRF9045MR1
CASE 1337 - 03, STYLE 1
TO - 272 DUAL LEAD
PLASTIC
MRF9045MBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, + 15
177
1.18
- 65 to +150
200
Value
0.85
Class
1 (Minimum)
M2 (Minimum)
Rating
3
Package Peak Temperature
260
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9045MR1 MRF9045MBR1
1


NXP Semiconductors Electronic Components Datasheet

MRF9045MR1 Datasheet

RF Power FET

No Preview Available !

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 μAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
IDSS
IDSS
IGSS
VGS(th)
2
VGS(Q)
3
VDS(on)
gfs
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Ciss
Coss
Crss
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
η
IMD
IRL
Typ
2.8
3.7
0.22
4
70
38
1.7
19
41
- 31
- 14
19
41
- 31
- 13
Max
Unit
10
μAdc
1
μAdc
1
μAdc
4
Vdc
5
Vdc
0.4
Vdc
S
pF
pF
pF
dB
%
- 28
dBc
-9
dB
dB
%
dBc
dB
MRF9045MR1 MRF9045MBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF9045MR1
Description RF Power FET
Maker NXP
Total Page 3 Pages
PDF Download

MRF9045MR1 Datasheet PDF

View PDF for Mobile






Similar Datasheet

1 MRF9045MR1 RF Power FET
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy