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MRFE6VP61K25HSR5 Datasheet RF Power LDMOS Transistors

Manufacturer: NXP Semiconductors

Download the MRFE6VP61K25HSR5 datasheet PDF. This datasheet also includes the MRFE6VP61K25HR6 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRFE6VP61K25HR6_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

 Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 24.0 74.0 22.9 74.6 Document Number: MRFE6VP61K25H Rev.

Key Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Device can be used Single--Ended or in a Push--Pull Configuration.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Characterized from 30 V to 50 V for Extended Power Range.
  • Suitable for Linear.

More Datasheets from NXP Semiconductors

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