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MTB10010U - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave transistor with internal input prematching cell in a SOT440A metal ceramic package with base connected to flange.

3 2 Top view Marking code: 10010U.

Features

  • Input prematching cell allows an easier design of circuits.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good characteristics stability and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

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Datasheet preview – MTB10010U

Datasheet Details

Part number MTB10010U
Manufacturer NXP
File Size 90.06 KB
Description NPN microwave power transistor
Datasheet download datasheet MTB10010U Datasheet
Additional preview pages of the MTB10010U datasheet.

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    Full PDF Text Transcription

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    DISCRETE SEMICONDUCTORS DATA SHEET MTB10010U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input prematching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good characteristics stability and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base class C narrowband pulsed power amplifiers at 1030 MHz for IFF applications.
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