NPN microwave power transistor
• Input prematching cell allows an
easier design of circuits
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good characteristics stability and
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
Common base class C narrowband
pulsed power amplifiers at 1030 MHz
for IFF applications.
QUICK REFERENCE DATA
Microwave performance for Tmb = 25 °C in a common base class C
tp = 1 µs;
δ = 1%
PINNING - SOT440A
3 base connected to ﬂange
handbook, 4 columns
NPN silicon planar epitaxial
microwave transistor with internal
input prematching cell in a SOT440A
metal ceramic package with base
connected to flange.
Marking code: 10010U.
Fig.1 Simplified outline and symbol.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20