Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
VDD
Tstg
TJ
Pin
Symbol
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
37
Value (2,3)
Vdc
Vdc
Vdc
C
C
dBm
Unit
Thermal Resistance, Junction to Case
Case Temperature 84C, 2.4 W CW
Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz
Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz
Case Temperature 92C, 24 W CW
Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz
Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
RJC
9.0
1.9
8.6
1.6
Class
C/W
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1 Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1 Adc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 12 Adc)
VGS(th)
1.0
2.0
3.0 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 40 mAdc)
VGS(Q)
—
2.9
— Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 40 mAdc, Measured in Functional Test)
VGG(Q)
6.2
6.9
7.7 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW7IC2020NT1
2
RF Device Data
Freescale Semiconductor, Inc.