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MW7IC2020NT1 Datasheet Power Amplifier

Manufacturer: NXP Semiconductors

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Overview

Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev.

1, 12/2013 RF LDMOS Wideband Integrated Power Amplifier The MW7IC2020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 2170 MHz.

This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel. VGS1 VGS2 VGS1 NC VGS2 NC NC NC Quiescent Current Temperature Compensation (1) 24 23 22 21 20 19 NC 1 18 NC GND 2 17 NC RFi.

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