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NXP Semiconductors Electronic Components Datasheet

MW7IC2020NT1 Datasheet

Power Amplifier

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Freescale Semiconductor
Technical Data
Document Number: MW7IC2020N
Rev. 1, 12/2013
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC2020N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 2170 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Driver Application — 2100 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 =
40 mA, IDQ2 = 230 mA, Pout = 2.4 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
MW7IC2020NT1
1805--2170 MHz, 2.4 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
2140 MHz
2170 MHz
32.6
32.6
32.4
16.8
17.0
17.0
7.7 --51.3
7.6 --51.4
7.5 --51.6
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 33 Watts
CW (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point 20 Watts CW
Driver Application — 1800 MHz
CTIDylQipp1ipc=ianlg4S,0iCnmghAlae,n--InCDeQal r2Bri=aenr2dW3w0--idmCthDAM,=PA3o.uP8t4e=rMf2oH.r4mzW,aInnacptteus:tAVSvDiggD.n,=aIQl2P8MAVRaogl=tnsi7,tu.5dedB
@ 0.01% Probability on CCDF.
PQFN 8 8
PLASTIC
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
1840 MHz
1880 MHz
31.8
31.8
31.8
17.4
17.4
17.4
7.6 --51.2
7.7 --50.2
7.7 --51.0
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.
VGS1
VGS2
Quiescent Current
Temperature Compensation (1)
24 23 22 21 20 19
NC 1
18 NC
GND 2
17 NC
RFin 3
16 RFout/VDS2
RFin 4
15 RFout/VDS2
RFin
RFout/VDS2
GND 5
14 NC
NC 6 7 8 9 10 11 12 13 NC
VDS1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Freescale Semiconductor, Inc., 2012--2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MW7IC2020NT1
1


NXP Semiconductors Electronic Components Datasheet

MW7IC2020NT1 Datasheet

Power Amplifier

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
VDD
Tstg
TJ
Pin
Symbol
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
37
Value (2,3)
Vdc
Vdc
Vdc
C
C
dBm
Unit
Thermal Resistance, Junction to Case
Case Temperature 84C, 2.4 W CW
Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz
Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz
Case Temperature 92C, 24 W CW
Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz
Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
RJC
9.0
1.9
8.6
1.6
Class
C/W
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
1 Adc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 12 Adc)
VGS(th)
1.0
2.0
3.0 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 40 mAdc)
VGS(Q)
2.9
— Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 40 mAdc, Measured in Functional Test)
VGG(Q)
6.2
6.9
7.7 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW7IC2020NT1
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number MW7IC2020NT1
Description Power Amplifier
Maker NXP
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