NXP Semiconductors Electronic Components Datasheet

MW7IC2020NT1 Datasheet

Power Amplifier

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Freescale Semiconductor

Technical Data

Document Number: MW7IC2020N

Rev. 1, 12/2013

RF LDMOS Wideband Integrated

Power Amplifier

The MW7IC2020N wideband integrated circuit is designed with on--chip

matching that makes it usable from 1805 to 2170 MHz. This multi--stage

structure is rated for 26 to 32 Volt operation and covers all typical cellular base

station modulation formats.

Driver Application — 2100 MHz

 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 =

40 mA, IDQ2 = 230 mA, Pout = 2.4 Watts Avg., IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

MW7IC2020NT1

1805--2170 MHz, 2.4 W AVG., 28 V

SINGLE W--CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIER

Frequency

Gps

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz

2140 MHz

2170 MHz

32.6

32.4

16.8

17.0

7.7 --51.3

7.6 --51.4

7.5 --51.6

 Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 33 Watts

CW (3 dB Input Overdrive from Rated Pout)

 Typical Pout @ 1 dB Compression Point ≃ 20 Watts CW

Driver Application — 1800 MHz

 CTIDylQipp1ipc=ianlg4S,0iCnmghAlae,n--InCDeQal r2Bri=aenr2dW3w0--idmCthDAM,=PA3o.uP8t4e=rMf2oH.r4mzW,aInnacptteus:tAVSvDiggD.n,=aIQl2P8MAVRaogl=tnsi7,tu.5dedB

@ 0.01% Probability on CCDF.

PQFN 8  8

PLASTIC

Frequency

Gps

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

1805 MHz

1840 MHz

1880 MHz

31.8

17.4

7.6 --51.2

7.7 --50.2

7.7 --51.0

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

 On--Chip Matching (50 Ohm Input, DC Blocked)

 Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

 Integrated ESD Protection

 In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.

VGS1

VGS2

Quiescent Current

Temperature Compensation (1)

24 23 22 21 20 19

NC 1

18 NC

GND 2

17 NC

RFin 3

16 RFout/VDS2

RFin 4

15 RFout/VDS2

RFin

RFout/VDS2

GND 5

14 NC

NC 6 7 8 9 10 11 12 13 NC

VDS1

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.

RF Device Data

Freescale Semiconductor, Inc.

MW7IC2020NT1

NXP Semiconductors Electronic Components Datasheet

MW7IC2020NT1 Datasheet

Power Amplifier

No Preview Available !

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Operating Junction Temperature (1,2)

Input Power

Table 2. Thermal Characteristics

Characteristic

VDSS

VGS

VDD

Tstg

Symbol

--0.5, +65

--6.0, +10

32, +0

--65 to +150

150

Value (2,3)

Vdc

C

dBm

Unit

Thermal Resistance, Junction to Case

Case Temperature 84C, 2.4 W CW

Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz

Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz

Case Temperature 92C, 24 W CW

Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz

Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz

Table 3. ESD Protection Characteristics

Test Methodology

RJC

9.0

1.9

8.6

1.6

Class

C/W

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

III

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3 260 C

Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

10 Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

1 Adc

Gate--Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IGSS

—

1 Adc

Stage 1 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 12 Adc)

VGS(th)

1.0

2.0

3.0 Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ1 = 40 mAdc)

VGS(Q)

—

2.9

— Vdc

Fixture Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ1 = 40 mAdc, Measured in Functional Test)

VGG(Q)

6.2

6.9

7.7 Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

(continued)

MW7IC2020NT1

RF Device Data

Freescale Semiconductor, Inc.

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MW7IC2020NT1 Datasheet

Power Amplifier

MW7IC2020NT1 Datasheet

Power Amplifier

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