Datasheet Details
| Part number | MW7IC2220GNR1 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 1.67 MB |
| Description | Power Amplifier |
| Download | MW7IC2220GNR1 Download (PDF) |
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Overview: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 13% ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW Output Power • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 Watts CW Pout.
Download the MW7IC2220GNR1 datasheet PDF. This datasheet also includes the MW7IC2220NR1 variant, as both parts are published together in a single manufacturer document.
| Part number | MW7IC2220GNR1 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 1.67 MB |
| Description | Power Amplifier |
| Download | MW7IC2220GNR1 Download (PDF) |
|
|
|
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