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NXP Semiconductors Electronic Components Datasheet

MW7IC2220NR1 Datasheet

Power Amplifier

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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2220N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2000 to 2200 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD--SCDMA.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA,
IDQ2 = 300 mA, Pout = 2 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 13%
ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW
Output Power
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 Watts
CW Pout.
Typical Pout @ 1 dB Compression Point ' 20 Watts CW
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Document Number: MW7IC2220N
Rev. 2, 5/2011
MW7IC2220NR1
MW7IC2220GNR1
MW7IC2220NBR1
2110--2170 MHz, 2 W Avg., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886--01
TO--270 WB--16
PLASTIC
MW7IC2220NR1
CASE 1887--01
TO--270 WB--16 GULL
PLASTIC
MW7IC2220GNR1
CASE 1329--09
TO--272 WB--16
PLASTIC
MW7IC2220NBR1
GND 1
VDS1
NC
2
3
16 GND
15 NC
VDS1
NC 4
NC 5
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
RFin
NC
VGS1
VGS2
VDS1
GND
6
14
7
8
9
10
13
11
12
(Top View)
RFout/VDS2
NC
GND
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008--2009, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
1


NXP Semiconductors Electronic Components Datasheet

MW7IC2220NR1 Datasheet

Power Amplifier

No Preview Available !

Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
--0.5, +65
--0.5, +5
32, +0
--65 to +150
150
225
20
Value (2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
2 W Avg.
(Pout = 2 W CW, Case Temperature = 78°C)
Stage 1, 28 Vdc, IDQ1 = 80 mA
4.3
Stage 2, 28 Vdc, IDQ2 = 300 mA
1.5
20 W Avg.
(Pout = 20 W CW, Case Temperature = 82°C) Stage 1, 28 Vdc, IDQ1 = 80 mA
4.3
Stage 2, 28 Vdc, IDQ2 = 300 mA
1.25
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
0 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
μAdc
IDSS
1
μAdc
IGSS
1
μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 23 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 80 mAdc)
VGS(Q)
2.8
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 80 mAdc, Measured in Functional Test)
VGG(Q)
9.5
12.2
16.5
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW7IC2220NR1
Description Power Amplifier
Maker NXP
Total Page 3 Pages
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