MW7IC2240NBR1 Datasheet | NXP Semiconductors

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. Typical Performance - Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 90 m A, IDQ2 = 420 m A, Pout = 4 Watts Avg., f = 2112.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 d B @ 0.01% Probability on CCDF. Power Gain - 30 d B Power Added Efficiency - 14% ACPR @ 5 MHz Offset - --50 d Bc in 3.84 MHz Bandwidth - Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power - Pout @ 1 d B pression Point ≃ 40 Watts CW - Stable into a 5:1 VSWR. All Spurs Below --60 d Bc @ 100 m W to 10 Watts CW Pout. Features - Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source Scattering Parameters - On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) - Integrated Quiescent Current Temperature pensation with Enable/ Disable Function (1) - Integrated ESD Protection - 225°C Capable Plastic Package - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. Document Number: MW7IC2240N Rev. 1, 6/2011 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2110--2170 MHz, 4 W Avg., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886--01 TO--270 WB--16 PLASTIC MW7IC2240NR1 CASE 1887--01 TO--270 WB--16 GULL PLASTIC MW7IC2240GNR1 CASE 1329--09 TO--272 WB--16 PLASTIC...