Overview: Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2240N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA.
Typical Performance
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., f = 2112.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 30 dB Power Added Efficiency — 14% ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power
• Pout @ 1 dB Compression Point ≃ 40 Watts CW • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts
CW Pout.
