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MW7IC2240NR1 - Power Amplifier

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. Document Number: MW7IC224.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. Typical Performance • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., f = 2112.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 30 dB Power Added Efficiency — 14% ACPR @ 5 MHz Offset — --50 dBc in 3.