OM3115P - Hybrid integrated circuits for inductive proximity detectors

NXP Semiconductors

Datasheet Details

Part number	OM3115P
Manufacturer	NXP Semiconductors
File Size	36.64 KB
Description	Hybrid integrated circuits for inductive proximity detectors
Datasheet	OM3115P Datasheet

General Description

OM3105P The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud.

The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an optocoupler.

It is also possible to perform a break function when using version OM3115P.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET OM3105P Hybrid integrated circuits for inductive proximity detectors Preliminary speciﬁcation File under Discrete Semiconductors, SC17 January 1994 Philips Semiconductors Philips.

Key Features

Extra small dimensions (3 x 20 mm max. ).
Wide supply voltage range (6 to 35 V).
Supply current typical 1.5 mA (output stage switched off).
High output current (250 mA max. ).
RC filter on the supply lines.
PNP output transistor protected against transients from the inductive load.
Circuit protected against wrong polarity connection of the supply voltage.
Electronic short-circuit protection.
Detection distance adjust.

More Datasheets from NXP Semiconductors

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OM3115N	Hybrid integrated circuits for inductive proximity detectors
OM3105N	Hybrid integrated circuits for inductive proximity detectors
OM3105P	Hybrid integrated circuits for inductive proximity detectors
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