900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

ON5088 Datasheet

NPN wideband silicon germanium RF transistor

No Preview Available !

ON5088
NPN wideband silicon germanium RF transistor
Rev. 3 — 12 December 2012
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
High maximum stable gain 27 dB at 1.8 GHz
110 GHz fT silicon germanium technology
1.3 Applications
2nd and 3rd LNA stage in DBS LNBs
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and WiMAX applications
Analog/digital cordless applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCB collector-base voltage
VCE collector-emitter voltage
VEB
IC
Ptot
hFE
CCBS
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base
capacitance
Conditions
open emitter
open base
shorted base
open collector
Tsp 90 C
IC = 10 mA; VCE = 2 V;
Tj = 25 C
VCB = 2 V; f = 1 MHz
Min Typ
--
--
--
--
- 25
[1] -
-
160 280
Max
10
3.0
10
1.0
40
136
400
Unit
V
V
V
V
mA
mW
- 70 -
fF


NXP Semiconductors Electronic Components Datasheet

ON5088 Datasheet

NPN wideband silicon germanium RF transistor

No Preview Available !

NXP Semiconductors
ON5088
NPN wideband silicon germanium RF transistor
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
fT transition frequency
Gp(max) maximum power gain
NF noise figure
IC = 25 mA; VCE = 2 V;
f = 2 GHz; Tamb = 25 C
IC = 25 mA; VCE = 2 V;
f = 12 GHz; Tamb = 25 C
IC = 5 mA; VCE = 2 V;
f = 12 GHz; S = opt;
Tamb = 25 C
Min Typ
- 55
[2] -
13
- 1.1
Max Unit
- GHz
- dB
- dB
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
34
4
21
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
ON5088
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
4. Marking
Table 4. Marking
Type number
ON5088
Marking
*6N
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
ON5088
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 December 2012
© NXP B.V. 2012. All rights reserved.
2 of 9


Part Number ON5088
Description NPN wideband silicon germanium RF transistor
Maker NXP
Total Page 9 Pages
PDF Download

ON5088 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 ON5088 NPN wideband silicon germanium RF transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy