PBHV2160Z Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability
- High collector current gain hFE at high IC
- Part: PBHV2160Z
- Manufacturer: NXP Semiconductors (official site)
- Size: 195.63 KB
Other PBHV2160Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PBHV2160Z | NPN transistor |
PBHV2160Z Description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PBHV2160Z Applications
- Electronic ballast for fluorecent lighting
- LED driver for LED chain module