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NXP Semiconductors Electronic Components Datasheet

PBHV2160Z Datasheet

NPN high-voltage low VCEsat (BISS) transistor

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PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
24 June 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability
High collector current gain hFE at high IC
3. Applications
Electronic ballast for fluorecent lighting
LED driver for LED chain module
LCD backlighting
HID front lighting
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
Quick reference data
Parameter
collector-emitter
voltage
collector current
Conditions
open base
Min Typ Max Unit
- - 600 V
- - 0.1 A
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NXP Semiconductors Electronic Components Datasheet

PBHV2160Z Datasheet

NPN high-voltage low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 C collector
3 E emitter
4 C collector
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
2, 4
1
3
sym016
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV2160Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
PBHV2160Z
Marking code
HV216Z
PBHV2160Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 13


Part Number PBHV2160Z
Description NPN high-voltage low VCEsat (BISS) transistor
Maker NXP
Total Page 13 Pages
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