PBSS3515M Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board requirements
- Part: PBSS3515M
- Manufacturer: NXP Semiconductors (official site)
- Size: 77.78 KB
Other PBSS3515M Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PBSS3515MB | PNP Transistor |
PBSS3515M Description
Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resist.