PBSS4320T Datasheet - NXP

NPN transistor

PBSS4320T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a

PBSS4320T General Description

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. MARKING TYPE NUMBER PBSS4320T MARKING CODE(1) ZG * Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-em.

PBSS4320T Datasheet (93.90 KB)

PBSS4320T Datasheet Preview — Preview of PBSS4320T PDF

Datasheet Details

Part number:

PBSS4320T

Manufacturer:

NXP ↗

File Size:

93.90 KB

Description:

Npn transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semi.

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PBSS4320T NPN transistor NXP

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PBSS4320T Features

PBSS4320T General Description

Datasheet Details

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