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PBSS4360Z Datasheet 3A NPN low VCEsat (BISS) transistor

Manufacturer: NXP Semiconductors

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS5360Z.

2.

Overview

PBSS4360Z 26 February 2014 SO T2 23 60 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3.