PBSS5220T Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor Features - Low collector-emitter saturation voltage VCEsat - High collector current capability: IC and ICM - Higher efficiency leading to less heat generation - Reduced printed-circuit board requirements - Cost effective alternative to MOSFETs in specific applications. APPLICATIONS - Power management - DC/DC converters - Supply line switching - Battery charger - LCD backlighting. - Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load driver (e.g. relays, buzzers and motors). handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. - 20 - 2 - 3 113 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. - = p: Made in Hong...