PBSS5320T transistor equivalent, pnp transistor.
* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
* High collector current capability
* High collector current gain
* Improve.
* Power management applications
* Low and medium power DC/DC convertors
* Supply line switching
* Batter.
PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T.
MARKING
TYPE NUMBER PBSS5320T
MARKING CODE(1) ZH∗
Note
1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China.
QUICK REFERENCE DATA
SYMBOL
PAR.
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