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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor
Product data sheet Supersedes data of 2002 Aug 08
2004 Jan 15
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
Product data sheet
PBSS5320T
FEATURES
• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
• High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T.
MARKING
TYPE NUMBER PBSS5320T
MARKING CODE(1) ZH∗
Note
1.