PBSS8110T Datasheet - NXP

NPN low VCEsat (BISS) transistor

PBSS8110T Features

* SOT23 package

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Major application segment

PBSS8110T General Description

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS9110T. MARKING TYPE NUMBER PBSS8110T Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME * DESCRIPTION plastic surface mounted pac.

PBSS8110T Datasheet (158.70 KB)

PBSS8110T Datasheet Preview — Preview of PBSS8110T PDF

Datasheet Details

Part number:

PBSS8110T

Manufacturer:

NXP ↗

File Size:

158.70 KB

Description:

Npn low vcesat (biss) transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product speciﬁc.

📁 Related Datasheet

PBSS8110D 1A NPN transistor (NXP)

PBSS8110S NPN low VCEsat (BISS) transistor (NXP)

PBSS8110X NPN transistor (NXP)

PBSS8110Y NPN transistor (NXP)

PBSS8110Z 1A NPN transistor (NXP)

PBSS8510PA 5.2A NPN Transistor (NXP)

PBSS2515E 0.5A NPN transistor (NXP)

PBSS2515F low VCEsat NPN transistor (NXP)

PBSS2515M NPN transistor (nexperia)

PBSS2515MB NPN transistor (nexperia)

TAGS

PBSS8110T NPN low VCEsat BISS transistor NXP

Image Gallery

PBSS8110T Features

PBSS8110T General Description

Datasheet Details

File Size:

Description:

PBSS8110T Distributor