PBSS9410PA transistor equivalent, 2.7 a pnp low vcesat (biss) transistor.
*
*
*
*
* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) ar.
*
*
*
*
* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS8510PA.
1.2 Features and benefits
.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 200.84KB)