logo

PDTB123YT Datasheet, NXP

PDTB123YT Datasheet, NXP

PDTB123YT

datasheet Download (Size : 102.34KB)

PDTB123YT Datasheet

PDTB123YT transistor equivalent, 50v resistor-equipped transistor.

PDTB123YT

datasheet Download (Size : 102.34KB)

PDTB123YT Datasheet

Features and benefits


* 500 mA output current capability
* Built-in bias resistors
* Simplifies circuit design
* Reduces component count
* Reduces pick and place costs

Application


* Digital application in automotive and industrial segments
* Control of IC inputs
* Cost-saving alternativ.

Description

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT. 1.2 Features and benefits
* 500 mA output current capability
* Built-in bias resistors
* S.

Image gallery

PDTB123YT Page 1 PDTB123YT Page 2 PDTB123YT Page 3

TAGS

PDTB123YT
50V
resistor-equipped
transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

Related datasheet

PDTB123YQA

PDTB123YU

PDTB123E

PDTB123EQA

PDTB123ET

PDTB123EU

PDTB123TT

PDTB113E

PDTB113EQA

PDTB113ET

PDTB113EU

PDTB113ZK

PDTB113ZQA

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts