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PEMB4 - PNP/PNP resistor-equipped transistors

Description

PNP resistor-equipped double transistor in a SOT666 plastic package.

Features

  • 300 mW total power dissipation.
  • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package.
  • Excellent coplanarity due to straight leads.
  • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors.
  • Reduces required board space.
  • Reduces pick and place costs.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB4 PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors • Reduces required board space • Reduces pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PNP resistor-equipped double transistor in a SOT666 plastic package.
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