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PESD12VV1BL Datasheet Very low capacitance bidirectional ESD protection diode

Manufacturer: NXP Semiconductors

General Description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients.

The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

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Overview

PESD12VV1BL Very low capacitance bidirectional ESD protection diode Rev.

2 — 18 March 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Bidirectional ESD protection of one line.
  • ESD protection up to 30 kV.
  • Low diode capacitance Cd = 17 pF.
  • IEC 61000-4-2; level 4 (ESD).
  • Rated peak pulse power: PPPM = 290 W.
  • IEC 61000-4-5 (surge); IPPM = 7.8 A.
  • Ultra low leakage current IRM < 1 nA.
  • AEC-Q101 qualified 1.3.