PESD18VF1BL Key Features
- Ultra low diode capacitance Cd = 0.35 pF
- High reverse standoff voltage VRWM = 18 V
- Very small voltage dependency of the capacitance
- ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
- Part: PESD18VF1BL
- Manufacturer: NXP Semiconductors (official site)
- Size: 336.25 KB
Other PESD18VF1BL Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PESD18VF1BL | Ultra low capacitance bidirectional ESD protection diode |
|
Nexperia |
PESD18VF1BL-Q | Ultra low capacitance bidirectional ESD protection diode |
|
Nexperia |
PESD18VF1BSF | Ultra low capacitance bidirectional ESD protection diode |
PESD18VF1BL Description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients.
PESD18VF1BL Applications
- NFC antenna protection
- Protection of high-speed data lines