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PESD5V0S1BA - Low capacitance bidirectional ESD protection diodes

Description

Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance; f = 1 MHz; VR = 0 V VALUE 5 35 UNIT V pF number of protected lines 1 PINNING PIN 1 2 anode 1 anode 2 DESCRIPTION 1 2 001aaa138 Low capacitance ESD protection diode in a very small

Features

  • Bi-directional ESD protection of one line.
  • Low diode capacitance.
  • Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs.
  • Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A.
  • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V.
  • ESD protection 30 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC-61000-4-5 (surge); Ipp = 12 A at tP = 8/20 µs.

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Full PDF Text Transcription

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0S1BA Low capacitance bi-directional ESD protection diode in SOD323 Product specification 2004 Mar 22 www.DataSheet4U.com Philips Semiconductors Product specification Low capacitance bi-directional ESD protection diode in SOD323 FEATURES • Bi-directional ESD protection of one line • Low diode capacitance • Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs • Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V • ESD protection 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC-61000-4-5 (surge); Ipp = 12 A at tP = 8/20 µs. APPLICATIONS • Cellular handsets and accessories • Portable electronics • Computers and peripherals • Communication systems • Audio and video equipment.
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