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PESD5V0S1BB - Low capacitance bidirectional ESD protection diodes

Description

Low capacitance ESD protection diode array in the ultra small SOD523 plastic package designed to protect one data line from ElectroStatic Discharge (ESD) damage.

DESCRIPTION plastic surface mounted pa

Features

  • Bi-directional ESD protection of one line.
  • Low diode capacitance.
  • Maximum peak pulse power: Ppp = 130 W at tp = 8/20 µs.
  • Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A.
  • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V.
  • ESD protection 30 kV bi-directional.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs.

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Full PDF Text Transcription

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PESD5V0S1BB Low capacitance bi-directional ESD protection diode in SOD523 package Product specification 2004 Mar 04 www.DataSheet4U.com Philips Semiconductors Product specification Low capacitance bi-directional ESD protection diode in SOD523 package FEATURES • Bi-directional ESD protection of one line • Low diode capacitance • Maximum peak pulse power: Ppp = 130 W at tp = 8/20 µs • Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V • ESD protection 30 kV bi-directional • IEC 61000-4-2; level 4 (ESD) • IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs.
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