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PESD5V0S2BT - Low Capacitance Bi-directional Double Esd Protection Diode

Description

Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic package designed to protect 2 data lines from the damage caused by Electro Static Discharge (ESD) and other transients.

Features

  • s s s s s s s s www. DataSheet4U. com Bi-directional ESD protection of 2 lines Low diode capacitance Max. peak pulse power: Ppp = 130 W at tp = 8/20 µs Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A Ultra low leakage current: IRM = 5 nA at VRWM = 5 V ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs. 1.3.

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Datasheet Details

Part number PESD5V0S2BT
Manufacturer NXP Semiconductors
File Size 108.46 KB
Description Low Capacitance Bi-directional Double Esd Protection Diode
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PESD5V0S2BT Low capacitance bi-directional double ESD protection diode in SOT23 package Rev. 02 — 27 May 2004 Product data sheet 1. Product profile 1.1 General description Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic package designed to protect 2 data lines from the damage caused by Electro Static Discharge (ESD) and other transients. 1.2 Features s s s s s s s s www.DataSheet4U.com Bi-directional ESD protection of 2 lines Low diode capacitance Max. peak pulse power: Ppp = 130 W at tp = 8/20 µs Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A Ultra low leakage current: IRM = 5 nA at VRWM = 5 V ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs. 1.
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