PESD5V0U2BM
PESD5V0U2BM is Ultra low capacitance bidirectional double ESD protection array manufactured by NXP Semiconductors.
description
Ultra low capacitance bidirectional double Electro Static Discharge (ESD) protection diode array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 k V two lines
I Ultra low diode capacitance: Cd = 2.9 p F I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 n A I AEC-Q101 qualified
1.3 Applications
I puters and peripherals I Audio and video equipment
I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I munication systems
I Portable electronics I Subscriber Identity Module (SIM) card protection I Fire Wire I High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 2.9 3.5 p F
NXP Semiconductors
Ultra low capacitance bidirectional double ESD protection array
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description cathode (diode 1) cathode (diode 2) mon cathode
Simplified outline
1 3
2 Transparent top view
Graphic symbol
1 3
2 006aab331
3. Ordering information
Table 3. Ordering information Type number Package
Name Description
PESD5V0U2BM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm
Version SOT883
4. Marking
Table 4. Marking codes Type number PESD5V0U2BM
Marking code GA
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol...
