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PESD5V0U2BM Datasheet

Ultra low capacitance bidirectional double ESD protection array

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PESD5V0U2BM
Ultra low capacitance bidirectional double ESD
protection array
Rev. 01 — 14 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode
array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect up to two signal lines from the damage caused by ESD and
other transients.
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 kV
two lines
I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD)
I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I 10/100/1000 Mbit/s Ethernet
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I FireWire
I High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 2.9 3.5 pF


NXP Semiconductors Electronic Components Datasheet

PESD5V0U2BM Datasheet

Ultra low capacitance bidirectional double ESD protection array

No Preview Available !

NXP Semiconductors
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection array
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode (diode 1)
cathode (diode 2)
common cathode
Simplified outline
1
3
2
Transparent
top view
Graphic symbol
1
3
2
006aab331
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PESD5V0U2BM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
Version
SOT883
4. Marking
Table 4. Marking codes
Type number
PESD5V0U2BM
Marking code
GA
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
55
65
Max Unit
150
+150
+150
°C
°C
°C
PESD5V0U2BM_1
Product data sheet
Rev. 01 — 14 August 2008
© NXP B.V. 2008. All rights reserved.
2 of 11


Part Number PESD5V0U2BM
Description Ultra low capacitance bidirectional double ESD protection array
Maker NXP
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