PESD5V0U2BT Datasheet | NXP Semiconductors

PESD5V0U2BT Ultra low capacitance bidirectional double ESD protection diode Rev. 01 - 27 March 2007 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD. 1.2 Features I Bidirectional ESD protection of two lines I Ultra low leakage current: IRM = 5 nA I Ultra low diode capacitance: Cd = 2.9 pF I ESD protection of up to 10 kV I IEC 61000-4-2; level 4 (ESD) 1.3 Applications I puters and peripherals I Audio and video equipment I Cellular handsets and accessories I 10/100/1000 Ethernet I Local Area Network (LAN) equipment I munication systems I Portable electronics I Subscriber Identity Module (SIM) card protection I FireWire I High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 2.9 3.5 pF NXP Semiconductors PESD5V0U2BT Ultra low capacitance bidirectional double ESD protection diode 2. Pinning information Table 2. Pin 1 2 3 Pinning Description cathode 1 cathode 2 mon cathode Simplified outline Symbol...