PESD5V0X2UAM - Ultra low capacitance unidirectional double ESD protection diode

NXP Semiconductors

Key Features

1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 z.

PESD5V0X2UAM ultra low capacitance unidirectional double esd protection diode by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PESD5V0X2UAM
Manufacturer	NXP Semiconductors
File Size	222.99 KB
Description	Ultra low capacitance unidirectional double ESD protection diode
Datasheet	PESD5V0X2UAM Datasheet

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Other Datasheets by NXP Semiconductors

Part Number	Description
PESD5V0X2UAMB	Ultra low capacitance unidirectional double ESD protection diode
PESD5V0X2UM	Ultra low capacitance unidirectional double ESD protection diode
PESD5V0X2UMB	Ultra low capacitance unidirectional double ESD protection diode
PESD5V0X1BCAL	Extremely low capacitance bidirectional ESD protection diode
PESD5V0X1BCSF	Ultra low capacitance bidirectional ESD protection diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1565 Transistors For Power Amplification (−60V, −3A) 2SB1565 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 10.0 4.5 φ3.2 2.8 14.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.