Datasheet Summary
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N-channel TrenchMOS™ logic level FET
Rev. 02
- 24 February 2005 Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features s Optimized for use in DC-to-DC converters s Low threshold voltage s Very low switching and conduction losses s Low thermal resistance.
1.3 Applications s DC-to-DC converters s Voltage regulators s Switched-mode power supplies s Notebook puters.
1.4 Quick reference data
.. s VDS ≤ 25 V s Qgd = 7.3 nC (typ) s RDSon ≤ 2.8 mΩ (VGS = 10 V) s ID ≤ 100 A s Qg(tot) = 32 nC (typ) s RDSon...